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    F60UP30DN PDF Datasheet瀏覽和下載

    型號:
    F60UP30DN
    PDF下載:
    下載PDF文件 在線瀏覽文檔
    內容描述:
    [60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers]
    文件大小:
    5115 K
    文件頁數:
    2 Pages
    品牌Logo:
    品牌名稱:
    THINKISEMI [ Thinki Semiconductor Co., Ltd. ]


     瀏覽型號F60UP30DN的Datasheet PDF文件第2頁 
    F60UP30DN
    F60UP30DN
    TO-3PB(TO-3PN)
    Cathode(Bottom Side Metal Heatsink)
    Pb
    Pb Free Plating Product
    60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
    APPLICATION
    ·
    ·
    ·
    ·
    ·
    ·
    ·
    Freewheeling, Snubber, Clamp
    Inversion Welder
    PFC
    Plating Power Supply
    Ultrasonic Cleaner and Welder
    Converter & Chopper
    UPS
    PRODUCT FEATURE
    ·
    Ultrafast Recovery Time
    ·
    Soft Recovery Characteristics
    ·
    Low Recovery Loss
    ·
    Low Forward Voltage
    ·
    High Surge Current Capability
    ·
    Low Leakage Current
    Internal Configuration
    Base Backside
    Anode
    Anode
    Cathode
    GENERAL DESCRIPTION
    F60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
    Absolute Maximum Ratings
    Parameter
    Repetitive peak reverse voltage
    Continuous forward current
    Single pulse forward current
    Maximum repetitive forward current
    Operating junction
    Storage temperatures
    Symbol
    V
    RRM
    I
    F(AV)
    I
    FSM
    I
    FRM
    Tj
    Tstg
    Test Conditions
    Tc =110°C
    Tc =25°C
    Square wave, 20kHZ
    Values
    300
    60
    600
    150
    175
    -55 to +175
    °C
    °C
    A
    Units
    V
    Electrical characteristics (Ta=25°C unless otherwise specified)
    Parameter
    Breakdown voltage
    Blocking voltage
    Forward voltage
    (Per Diode)
    Reverse leakage
    current(Per Diode)
    Reverse recovery
    time(Per Diode)
    Symbol
    V
    BR
    ,
    V
    R
    V
    F
    Test Conditions
    I
    R
    =100μA
    I
    F
    =30A
    I
    F
    =30A, Tj =125°C
    V
    R
    = V
    RRM
    I
    R
    Tj=150°C, V
    R
    =300V
    I
    F
    =0.5A, I
    R
    =1A, I
    RR
    =0.25A
    I
    F
    =1A,V
    R
    =30V, di/dt =200A/us
    35
    26
    Min
    300
    0.96
    0.85
    1.20
    1.00
    10
    100
    45
    40
    μA
    V
    Typ.
    Max.
    Units
    t
    rr
    ns
    Thermal characteristics
    Junction-to-Case
    Paramter
    Symbol
    R
    θJC
    Typ
    0.8
    ℃/W
    Units
    Rev.08T
    ? 1995 Thinki Semiconductor Co., Ltd.
    Page 1/2
    http://www.thinkisemi.com.tw/
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